F2/N2 Gas Mixtured
F₂/N₂ gas is a mixture of Fluorine (F₂) the strongest naturally occurring oxidizing gas and Nitrogen (N₂), an inert, stable gas that serves as the diluent base. The ratio between the two components is tightly controlled to create a stable, safer-to-handle gas environment compared with pure F₂, while still delivering highly reactive Fluorine (F) radicals for surface treatment and material etching processes.
The mixture does not stratify inside the cylinder (since both F₂ and N₂ remain stable gases), making it suitable for long-term storage provided the system has been properly cleaned and passivated.
Industrial Manufacturing of F2/N2 Gas Mixture
Blending, F₂ and N₂ are charged in precise volumetric ratios (typically 10% or 20% F₂) to reach the target concentration, with tolerance tightly controlled (± 5%). The dedicated cylinders (aluminum/steel, CGA 679 valve) are then filled to 90–140 bar depending on concentration, fitted with safety valves and remote isolation capability. Each production batch is tested for purity, component ratio, and valve tightness before shipment, certified to ISO 9001:2015.
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| Parameter | Detail |
| Composition | F₂ diluted in N₂ base (10% or 20% F₂) |
| Cylinder capacity | 47L |
| Cylinder type | Aluminum / Steel |
| Valve type | CGA 679 |
| Filling pressure | 90 – 100 bar |
| Composition tolerance | ± 5% |
| Standard | ISO 9001:2015 |
Applications of F2/N2
Thanks to its ability to supply clean atomic F radicals (without generating carbon residue as CF₄/SF₆ do), F₂/N₂ gas is widely used in dry etching of silicon, silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and certain metal films (W, Ti, Al) in semiconductor chip fabrication, as well as in chamber cleaning to remove deposit build-up in CVD/plasma chambers, partially replacing NF₃/SF₆ to increase cleaning speed and reduce greenhouse gas emissions
10% F2/N2
The 10% F₂/N₂ mixture is used for chamber cleaning in CVD/plasma equipment and medium-rate dry etching of silicon, SiO₂, and metal films, with performance comparable to NF₃ at equivalent flow rates
20% F2/N2
The 20% F₂/N₂ mixture delivers 1.3–1.5x faster etch/clean rates than the 10% mixture, suited for rapid chamber cleaning between production batches and etching thick films or hard-to-react materials.